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 R8A20110BG (MARIE)
Network Signature Matching Co-Processor (1 M-bit Full Ternary CAM)
REJ03H0002-0100 Rev.1.00 Feb 21, 2005
Description
"MARIE" is a new RENESAS Ternary CAM co-processor targeted for the network packet classification and signature matching application. MARIE's 1 M-bit special features, small package and reduced pin count interface makes it suitable for cost sensitive platforms. MARIE provides a 36-bit Data bus SSTL-2 interface and is able to achieve 100 Msps in Turbo Mode. During normal search mode MARIE performs 50 Msps at 144-bit lookup. A special shifted payload algorithm for the signature matching makes MARIE a perfect fit for IDS applications.
Features
* * * * * * * * * * * 1 M-bit full ternary CAM 100 Msps max. 144-bit LU/288-bit LU with Turbo Search 50 Msps max. 144-bit LU with Normal Search 25 Msps max. 288-bit LU with Normal Search Shifting payload for signature matching application. 36-bit DQ interface (reduced pin count interface) Priority encoder IEEE 1149.1 test port 2.5 V/1.5 V power supply SSTL-2 interface 1.7 x 1.7 mm, 1 mm pitch 256 PBGA
Rev.1.00 Feb 21, 2005 page 1 of 8
R8A20110BG (MARIE)
Block Diagram
TDR
DQ[35:0]
Header-0 Header-1
TDSR
JTAG
TDI TDO TMS TCK TRST
OID_I
Header select Combined Search Data
Shifted payload
Offset
Header
Payload
Search Mask Register
OP_ENA OP[5:0]
DQS
SR_F
CLK, ZCLK
Control Register
Full Ternary CAM Array
Priority Encoder
RSTL TUE
IND OID_O (TRF)
Rev.1.00 Feb 21, 2005 page 2 of 8
R8A20110BG (MARIE)
Functional Description
1. Denser and Low power CAM MARIE is a new Network Signature Matching Co-Processor ideal for IDS applications. The specially designed custom SRAM cell takes advantage of space and power increasing MARIE's overall performance. 2. Half Sized Global Mask Search Register In a conventional TCAM the Global Mask Search Register consists of the same number of register bits as number of CAM bits. During a search command the Global Mask Search Register controls the bits that participate in the search. In MARIE's TCAM the Global Mask Search Register controls two CAM bits at the same time, making MARIE's GMSR one half the size of a conventional CAM. As a result range mask can be achieved, but bit mask is not supported. GMSR is only used during search.
Search Comparand Key DQ Global Mask Search
0
1
1
X
1
1
X
0
Full Ternary CAM Array
The number of GMSR is same as that of CAM array. GMSR bit count corresponds to TCAM bit count.
Figure 1 Global Mask Search (conventional)
Search Comparand Key DQ Global Mask Search
0
1
X
X
1
1
X
0
Full Ternary CAM Array
The number of GMSR is half size of that of CAM array. A GMSR bit affects to two-TCAM bits at the same time.
Figure 2 Global Mask Search (MARIE)
Rev.1.00 Feb 21, 2005 page 3 of 8
R8A20110BG (MARIE) 3. Special Flag Bits at MSB Bit [143:142] in the 144-bit lookup size or bit [287:286] in the 288-bit lookup size can have a special purpose for each entry. These bits are used to indicate whether the entry is empty or full, bit "00" = empty or bit "11" = full. Same data are always written to these bits depending on "empty" or "full". When the user wants to search for the first "empty" location, a search key of 2'b00 for bit [143:142] (or [287:286] in 288 configuration) is applied. In other words, the GMSR should set to "0" for [141:0] or [285:0]. MARIE does not implement special hardware to know the next free address. This is known by using a special flag bit and a normal search command. After power on, the TCAM memory data is in the unknown state of empty/full. All the data entries have to be initialized with the Write Delete Entry command so that these special flag bits are all set to "empty" MSB (bit "00"). 4. Address Source and Data Source A couple of different sources can be selected to write data or mask into MARIE's TCAM Array. There are two possible sources for the address; the DQ input pin and the Address Source Register (ASR). Similarly there are two sources for the data input: the DQ input pin and the Data Source Register (DSR). Address Source Register (ASR) When Write TCAM is issued DQ-pin input or ASR can be selected as internal Address source. When the Search result is a hit, the corresponding #entry address is transferred to ASR. The user can trace the search successful history by reading the data from the ASR to the DQ pin. Searching for a "00XXXXX" would return the first empty location. Data Source Register (DSR) The DQ-pin or DSR can be selected as a data source. When the Search result is a miss, the corresponding compared key is transferred to DSR. The missed compared data can later be used for pseudo learning or writing to the TCAM. 5. Pre-programmed Configuration MARIE's internal configuration should be pre-programmed before operation starts. 8 K entry times 144-bit lookup 4 K entry times 288-bit lookup 6. Pseudo Learn MARIE does not implement special hardware to support the Learn command. However, Pseudo Learn can be done by a combination of DSR and other common commands. First, when Search miss occurs, the search compared key is memorized into the DSR. By using the Write command and the data source of DSR Learning can be achieved. It is also possible to combine the pseudo learn with the location of the next free address search described in section 4.
Search key
DQ
Search Miss DSR Pseudo Learn
TCAM Array
What is Pseudo Learn? Normal search Search Miss Stack to DSR Write from DSR If the next free address is not known, the additional sequence described in sect. 1-4 should be done before Pseudo Learn.
Figure 3 Pseudo Learn
Rev.1.00 Feb 21, 2005 page 4 of 8
R8A20110BG (MARIE) 7. Turbo Mode with Shifting Payload When performing unanchored searches on the payload data the turbo mode can be useful. In this mode an internal shifting algorithm helps increase the bandwidth at the IO and also eases the host processing. Once the Turbo Data Shift Register (TDSR) is full MARIE performs a search and automatically shifts the key 1byte per clock, executing one search per clock until a match is found or the register empties. The user would update the Turbo Data Register (TDR) (usually every 36 cycles). No redundant payload data is inputted from the host MARIE allowing for a bandwidth increase (in 36-bit mode) and easing the host processing. Additionally the user can provide a header. The header is a register that is kept constant over the search operation. These registers are HDR0 (2B) and HDR1 (16B). In the 144-bit lookup size mode HDR0 or no header can be useful. In the 288-bit lookup size mode HDR0, HDR1, or no header could be selected. The header user mode is selected in the ST register. The search result occurs on every clock. The user receives the return data via the IND pin The performance limit of that Turbo Search Mode is 100 Msps in 144-bit lookup 100 Msps in 288-bit lookup
Packet contents
A B c d E f G H Warning! XYZ apple orange
Payload offset0 Payload offset1 Payload offset2 Payload offset3 Payload offset4 Payload offset5 Payload offset6 Payload offset7 Payload offset8 Payload offset9
ABcdEfGH BcdEfGHW cdEfGHWa dEfGHWar EfGHWarn fGHWarni GHWarnin HWarning Warning! arning!X HIT
Figure 4 Shifted Payload Search
IN
TDR TDSR
Header-0 Header-1
Header select
Shifted payload
Combined Search Data
Offset
Header
Payload
Full Ternary CAM Array
OUT
Figure 5 Turbo Search Mode
Rev.1.00 Feb 21, 2005 page 5 of 8
R8A20110BG (MARIE)
Pin Description
* Common
Pin Name Master clock /Master clock Reset L Tuning enable Symbol CLK ZCLK RSTL TUE I/O I I I I Interface SSTL-2 SSTL-2 2.5V LVTTL 2.5V LVTTL Description All input pins are referenced to the rising edge of CLK. Some input pins are referenced to the rising edge of ZCLK. This signal is hardware reset of MARIE device. This signal is used only in Power Up Sequence for internal tuning. Keep always GND after Power Up Sequence.
* Network Processor/ASIC Interface
Pin Name Operation enable Operation code [5:0] DQ [35:0] Symbol OP_ENA OP DQ I/O I I I/O-Tri Interface SSTL-2 SSTL-2 SSTL-2 Description OP_ENA enables all functions, which is defined during two cycles, cycle-A and cycle-B. OP [5:0] specifies the instruction and other commands, which is defined within two cycles, cycle-A and cycle-B. Multiplexed Address/Data bus during Read, Write and Search command. These pins are used for Address field, and for Data field, which specifies Data and Mask. This signal is buffering the CLK. The IND signal is used to address-input of externally located SRAM. That is to lookup Rule corresponding to MARIE search address. This signal specifies Search results. It sets in Search command. This signal is directly transferred from OID_I [2:0]. OID_O [2] is used as TRF (TDR Register write enable Flag) in Turbo Search Mode. Search Result Flag is as Local Winner Flag in cycle-A and Multiple Match Flag in cycle-B. Local Winner Flag goes high when Search result is "HIT". Multiple Match Flag goes high when the multiple matched entries are found.
DQS Rule index [6:0] Offset ID in [2:0] Offset ID out [2:0]
DQS IND OID_I OID_O
O-Tri O-Tri I O-Tri
SSTL-2 SSTL-2 SSTL-2 SSTL-2
Search result flag
SR_F
O
SSTL-2
* JTAG Interface
Pin Name Test mode select Test data input Test data output Test clock JTAG reset Symbol TMS TDI TDO TCK TRST I/O I I O I I Interface 2.5V LVTTL 2.5V LVTTL 2.5V LVTTL 2.5V LVTTL 2.5V LVTTL JTAG data input pin JTAG data output pin JTAG clock JTAG scan reset Description This signal selects the JTAG instruction and the state.
Note: JTAG specification is referenced to IEEE 1149.1.
* Power and Ground
Pin Name Vectored Voltage for search I/O buffer supply voltage Input reference voltage Ground Symbol V_CORE V_MAT VCCQ V_REF GND I/O -- -- -- -- -- -- -- -- -- -- Interface Description 1.5 V for core and peripheral circuitry 1.5 V for search circuitry. Must be same as V_CORE 2.5 V for DRAM and I/O 50% of VCCQ 0 V Ground level
Rev.1.00 Feb 21, 2005 page 6 of 8
R8A20110BG (MARIE)
Pin Arrangement
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
A
VCCQ
DQ[0]
GND
OP_ENA
VCCQ
OP[0]
OP[1]
VCCQ
VCCQ
OID_I[0]
OID_I[1]
VCCQ
NC
GND
DQ[1]
VCCQ
A
B
DQ[2]
GND
DQ[4]
V_CORE
DQ[6]
V_REF
OP[2]
OP[3]
OP[4]
OP[5]
VCCQ
OID_I[2] V_CORE
DQ[5]
GND
DQ[3]
B
C
DQ[8]
VCCQ
V_CORE
DQ[10]
GND
DQ[12]
VCCQ
DQ[14]
NC
VCCQ
NC
GND
DQ[9]
V_CORE
VCCQ
DQ[7]
C
D
DQ[16]
GND
DQ[18]
V_CORE
DQ[20]
V_MAT
DQ[22]
GND
NC
NC
V_MAT
DQ[15]
V_CORE
DQ[13]
GND
DQ[11]
D
E
DQ[24]
V_CORE
DQ[26]
DQ[28]
DQ[30]
V_MAT
GND
V_MAT
V_MAT
TUE
V_MAT
DQ[21]
GND
DQ[19]
V_CORE
DQ[17]
E
F
VCCQ
DQ[32]
GND
GND
V_MAT
V_MAT
GND
GND
GND
GND
V_MAT
V_MAT
DQ[25]
GND
DQ[23]
VCCQ
F
G
DQ[34]
GND
ZCLK
GND
V_MAT
V_MAT
GND
GND
GND
GND
V_MAT
V_MAT
DQ[31]
DQ[29]
GND
DQ[27]
G
H
NC
GND
GND
GND
V_MAT
V_MAT
GND
GND
GND
GND
V_MAT
V_MAT
NC
GND
DQ[35]
DQ[33]
H
J
NC
GND
CLK
GND
V_MAT
V_MAT
GND
GND
GND
GND
V_MAT
V_MAT
NC
GND
NC
NC
J
K
NC
GND
GND
GND
V_MAT
V_MAT
GND
GND
GND
GND
V_MAT
V_MAT
NC
NC
GND
NC
K
L
VCCQ
NC
NC
GND
V_MAT
V_MAT
GND
GND
GND
GND
V_MAT
V_MAT
NC
NC
NC
VCCQ
L
M
NC
V_CORE
NC
NC
NC
V_MAT
GND
V_MAT
V_MAT
GND
V_MAT
NC
GND
NC
V_CORE
NC
M
N
NC
GND
NC
V_CORE
NC
V_MAT
NC
GND
TMS
TRST
V_MAT
NC
V_CORE
NC
GND
NC
N
P
NC
VCCQ
V_CORE
NC
GND
NC
VCCQ
TCK
TDI
VCCQ
TDO
GND
RSTL
V_CORE
VCCQ
NC
P
R
NC
GND
NC
V_CORE
IND[1]
VCCQ
IND[4]
IND[5]
IND[6]
NC
VCCQ
OID_O[1] V_CORE
GND
GND
NC
R
T
VCCQ
DQS
GND
IND[0]
VCCQ
IND[2]
IND[3]
VCCQ
V_REF
NC
OID_O[0]
VCCQ
OID_O[2]
GND
SR_F
VCCQ
T
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(Top view) Note: V_CORE and V_MAT can be combined.
Rev.1.00 Feb 21, 2005 page 7 of 8
R8A20110BG (MARIE)
Package Dimensions
256F7X-D
EIAJ Package Code -- JEDEC Code -- Weight(g) Under Development e
256pin 17 x 17mm body BGA
D D1
A
b
T R P N M L K J H G F E D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
E1
E
y A1
Symbol A A1 b D D1 E E1 e y
Dimension in Millimeters Min Nom Max -- -- 2.0 0.4 0.5 0.3 0.4 0.6 0.5 -- -- 17.0 -- -- 15.0 -- -- 17.0 15.0 -- -- 1.0 -- -- -- -- 0.15
Rev.1.00 Feb 21, 2005 page 8 of 8
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
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